作为表面增强拉曼光谱基底的高度均匀Au纳米棒的构筑及对福美双的检测

采用种子生长法制备Au纳米棒(GNRs),随后进行组装和煅烧得到单层致密堆积的GNRs薄膜。在煅烧过程中,组装所需有机物在煅烧过程中分解,从而使得GNRs表面具有较高的清洁度。研究中发现,煅烧前后金纳米棒表面的间隙进一步提高,增强了其SERS(表面增强拉曼光谱)活性。为了研究其SERS活性,选择了2种探针分子以研究其灵敏度和均匀性,发现其具有较高的灵敏度和高的信号稳定性。随后将所制备的SERS基底成功用于检测超低浓度的农药分子。     

g-C3N4/Ag/TiO2复合材料的构筑及其光催化性能（英文）

以合成的g-C3N4纳米片和Ag/TiO2空心微球为原料,采用机械搅拌的方法构筑了g-C3N4/Ag/TiO2三元复合光催化剂。采用X射线衍射(XRD)、傅里叶变换红外光谱(FT-IR)、扫描电镜(SEM)、X射线光电子能谱(XPS)、紫外-可见光漫反射(UV-Vis DRS)和光致发光光谱(PL)对g-C3N4/Ag/TiO2进行了表征。研究表明,g-C3N4/Ag/TiO2是由Ag/TiO2微球和g-C3N4纳米片复合而成的。与TiO2相比,其可见光响应范围延长,光生载流子的分离速率加快。在室温下,用降解罗丹明B的反应考察了g-C3N4/Ag/TiO2的可见光催化活性。研究表明,光照180 min时,g-C3N4(0.5%)/Ag/TiO2显示了最高的光催化活性(91.9%),分别是TiO2和Ag/TiO2的7.5和1.8倍。光催化活性的提高与合理的异质结构建和Ag的导电性能有关。     

2D/3D ZnIn2S4/TiO2复合物的原位构筑及其提高的光催化性能

通过高温煅烧和油浴的方法构筑二维/三维(2D/3D) ZnIn₂S₄/TiO₂异质结, 应用于光催化降解罗丹明B (RhB)和四环素(TC), 来研究异质结的构筑对TiO₂可见光响应范围和光生载流子对分离效率的影响. 结果表明, TiO₂维持了MOFs的形貌, 显示窄的可见光响应范围和高的光生电荷复合率, 与ZnIn₂S₄纳米片复合后, TiO₂的比表面积增大, 光催化活性位点增多. 带隙宽度也由TiO₂的3.23 eV减小到ZnIn₂S₄/TiO₂-II的2.52 eV, 从而获得了更宽的可见光响应范围. 能带结构表明ZnIn₂S₄/TiO₂是type II型异质结, 提高了光生载流子对的分离与转移效率. 在可见光照射下, ZnIn₂S₄/TiO₂-II显示了最高的RhB光催化降解效率(93%), 分别是TiO₂和ZnIn₂S₄的18和2倍. 同时, ZnIn₂S₄/TiO₂-II也显示出比TiO₂和ZnIn₂S₄更高的TC降解效率(90%). 循环实验表明ZnIn₂S₄/TiO₂-II能保持良好的稳定性, 经5次循环实验后仍能降解83%的RhB. 研究表明基于MOFs衍生的TiO₂构筑2D/3D ZnIn₂S₄/TiO₂异质结是提高TiO₂光催化性能的一条有效途径.     

Comparison of coating properties obtained by MAO on magnesium alloys in silicate and phytic acid electrolytes

Anodic coatings were prepared by using microarc oxidation (MAO) on AZ91HP in silicate containing solution (Si-solution) and phytic acid containing solution (P-solution), respectively. The influence of the electrolytes on coating structure, morphology and composition was studied by using X-ray diffraction (XRD), environmental scanning electron microscope (ESEM) and energy dispersive X-ray spectroscopy (EDX). Potentiodynamic polarization test and immersion test were employed to evaluate the corrosion resistance of anodic coatings. Different electrolytes caused the differences in the MAO process and coating properties. The breakdown voltage and the final voltage in P-solution were higher than those in Si-solution. The pore uniformity of anodic coatings obtained in Si-solution (Si-film) was worse than that in P-solution (P-film). XRD analyses indicated that Si-film was amorphous, while P-film consisted of MgO. The corrosion resistance of the sample coated with P-film was better than that with Si-film.     

激光驱动的毛细管等离子体尾波特性

基于激光等离子体尾波解析模型,分析了毛细管中激光与等离子体相互作用,数值计算了尾波中基本物理量。计算结果表明:毛细管等离子体尾波幅度与毛细管半径有关,在较小的毛细管中尾波幅度更大。在相同的激光与等离子体参数情况下,与无界等离子体尾波相比较,毛细管等离子体尾波中电子空泡纵向尺度、电场强度峰值、角向自生磁场强度峰值提高了60%,这些特征都表明毛细管等离子体尾波更有利于电子加速。     

Selective trap filling induced by electron pulse excitation during TSC measurement in PbI2

Thermally stimulated current (TSC) measurements have been performed on samples cut from a PbI₂ single crystal. After light excitation, several peaks have been observed in the range 77-320 K. It is demonstrated that excitation by means of a pulsed electron beam can be used to selectively fill either electron or hole traps. The results on PbI₂ confirm that most of the observed traps can be identified as hole traps.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Theory of dynamics of electron wave packets in time-resolved two-photon photoemission via image states

Time-resolved two-photon photoemission (TR2PPE) from the Cu(100) surface is investigated by the Keldysh Green function method in order to analyze ultrafast dynamics of an electron wave packet in the image states of the surface. By numerical analysis, the quantum beats in the TR2PPE spectrum due to interference among the image states are reproduced, and the motion of the electron wave packet in front of the surface is demonstrated. It is discussed on the basis of the obtained results as to how the motion of the electron wave packet is evaluated from the TR2PPE spectrum.     

A novel fabrication method for stoichiometric strontium bismuth tantalate thin films for memory devices

A novel method of processing ferroelectric thin films to eliminate excess bismuth is reported. Rapid thermal annealing initiates the crystallization of bismuth layer- structured ferroelectric thin films. Subsequent crystallization annealing for longer periods improves the crystallinity of the thin films. During annealing bismuth is known to diffuse to the surface and into the electrode, which is deleterious to the device performance. Forming-gas annealing after the rapid thermal annealing (prior to the crystallization annealing) reduces the bismuth diffusion into the electrode significantly. The suppression of bismuth diffusion into the electrode and the elimination of excess bismuth in the films improves and stabilizes the electrical properties of the capacitors, in particular their electronic conduction.     

三磷酸腺苷在TiO2掺杂碳纳米纤维修饰电极上的电化学行为

采用循环伏安法和示差脉冲伏安法研究了三磷酸腺苷(ATP)在TiO2掺杂碳纳米纤维(TiO2@CNF)修饰的碳离子液体电极表面(TiO2@CNF/CILE)的电化学行为。结果表明,ATP在TiO2@CNF/CILE表面有一个明显的氧化峰,在pH 3.0的Britton-Robinson(BR)缓冲溶液中修饰电极对ATP具有显著的电催化作用。纤维状的TiO2@CNF能够有效促进电子转移,增加电化学信号。当ATP浓度分别在4.0×10^-9~2.0×10^-6mol/L和2.0×10^-6~1.0×10^-4mol/L范围时,氧化峰电流与ATP浓度呈良好的线性关系,检测限为1.4 nmol/L。修饰电极可用于注射液中ATP的测定。